symbol v ds v gs i dm t j , t stg symbol typ max 32 42 65 100 r q jl 25 35 junction and storage temperature range a p d c 3.0 1.9 -55 to 150 t a =70c i d 10 7.8 30 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv 20 gate-source voltage drain-source voltage 30 r q ja c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s AON3406 30v n-channel mosfet features v ds (v) = 30v i d = 10a (v gs = 10v) r ds(on) < 15m w (v gs = 10v) r ds(on) < 24m w (v gs = 4.5v) general description the AON3406 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in p wm applications. the source leads are separated to all ow a kelvin connection to the source, which may be used to bypass the source inductance. dfn 3x3 top view bottom view pin 1 g ds top view 1 2 3 4 8 7 6 5 alpha & omega semiconductor, ltd. www.aosmd.com
AON3406 symbol min typ max units bv dss 30 v 0.003 1 t j =55c 5 i gss 100 na v gs(th) 1.4 1.75 3 v i d(on) 30 a 12 15 t j =125c 18 22 18 24 m w g fs 30 s v sd 0.73 1 v i s 4 a c iss 955 1200 pf c oss 145 pf c rss 112 pf r g 0.5 0.85 w q g (10v) 17 24 nc q g (4.5v) 9 12 nc q gs 3.4 nc q gd 4.7 nc t d(on) 5 6.5 ns t r 6 7.5 ns t d(off) 19 25 ns t f 4.5 6 ns t rr 19 21 ns q rr 9 12 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =10a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.5 w , r gen =3 w turn-off fall time total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m w v gs =4.5v, i d =9a i s =1a,v gs =0v v ds =5v, i d =10a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =10a reverse transfer capacitance i f =10a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2 : nov 2009 alpha & omega semiconductor, ltd. www.aosmd.com
AON3406 typical electrical and thermal characteristics 800 140 220 80 140 0.5 15 7 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 5v 0 4 8 12 16 20 24 28 32 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 20 22 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =10a v gs =4.5v i d =9a 10 20 30 40 50 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) i d =10a 25c 125c v ds =5v v gs =4.5v v gs =10v 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AON3406 typical electrical and thermal characteristics 800 140 220 80 140 0.5 15 7 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss v ds =15v i d =10a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =42c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 10s dc r ds(on) limited t j(max) =150c t a =25c 100 m s 100ms alpha & omega semiconductor, ltd. www.aosmd.com
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